Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face-Reference-Cited by-同舟云学术

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Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

Published:2004-06 Issue: Volume:457-460 Page:913-916
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Negoro Yuki¹,Katsumoto K.²,Matsunami Hiroyuki²,Kimoto Tsunenobu²,Pensl Gerhard³,Schmid Frank⁴

Affiliation:

1. Honda R&D Co.

2. Kyoto University

3. Friedrich-Alexander-Universität Erlangen-Nürnberg

4. University of Erlangen-Nürnberg

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.913.pdf

Reference8 articles.

1. H. Tanaka, S. Tanimoto, M. Yamanaka and M. Hoshi: Mater. Sci. Forum Vol. 389-393 (2002), p.803.

2. K. Tone and J. H. Zhao: IEEE Trans. Electron Devices Vol. 46 (1999), p.612.

3. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett. Vol. 20 (2002), p.611.

4. Y. Negoro, N. Miyamoto, T. Kimoto and H. Matsunami: Appl. Phys. Lett. Vol. 80 (2002), p.240.

5. F. Schmid, M. Laube, G. Pensl, G. Wagner and M. Maier: J. Appl. Phys. Vol. 91 (2002), p.9182.

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1. Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20);Materials Science Forum;2006-10

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