Affiliation:
1. Ecole Nationale Suprérieures d'Arts et Métiers
2. STMicroelectronics
3. Université de Metz
Abstract
We have developed a new convenient tool for local stress and strain analysis in the scanning electron microscope. It is based on the Kossel diffraction, physical phenomenon that is known for a long time because of its high accuracy for lattice constant determination in micron regions. The pattern is recorded on a CCD camera allowing a fast and reliable analysis. This technique has been applied to several materials. In-situ tensile tests were performed on a shape memory alloy. During loading, we observe clearly a shift of Kossel lines on the diagram, whose magnitude depends on the (hkl) crystallographic planes. The stress can be deduced from the diffracting plane strain measurement using a single crystal stress analysis.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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