Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)

Author:

Lei W.1,Chen Y.H.1,Wang Y.L.1,Ye X.L.1,Jin P.1,Xu Bo1,Zeng Yi Ping1,Wang Z.G.1

Affiliation:

1. Chinese Academy of Sciences

Abstract

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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