Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE-Reference-Cited by-同舟云学术

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Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE

Published:2004-06 Issue: Volume:457-460 Page:1557-1560
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Gogneau N.¹,Fossard F.²,Monroy Eva¹,Monnoye Sylvain³,Mank Hugues³,Daudin B.⁴

Affiliation:

1. Equipe mixte CEA/CNRS/UJF Nanophysique et Semiconducteurs

2. CEA/CNRS/UJF ''Nanophysique et Semiconducteurs'' DRFMC/SP2M

3. NOVASiC

4. CEA-Grenoble

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1557.pdf

Reference6 articles.

1. T. Sasaki and T. Matsuoka, J. Appl. Phys. Vol. 64 (1988), p.4531.

2. Z. P. Guan, A. L. Cai, H. Porter, J. Cabalu, J. Chen, S. Huang, and R. E. Giedd, J. Vac. Sci. Technol. A Vol. 19 (2001), p.280.

3. G. Mula, C. Adelmann, S. Moehl, J. Oullier, and B. Daudin, Phys. Rev. B Vol. 64 (2001), p.195406.

4. N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudin, J. Appl. Phys. Vol. 94 (2003), p.2254.

5. C. Adelmann, J. Brault, G. Mula, B. Daudin, L. Lymperakis, and J. Neugebauer, Phys. Rev. B Vol. 67 (2003), p.165419.

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