Structural and Electronic Properties of the 6H-SiC(0001)/Al<sub>2</sub>O<sub>3</sub> Interface Prepared by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition

Published:2004-06 Issue: Volume:457-460 Page:1369-1372
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Seyller Thomas¹,Gao Kun Yuan¹,Ley Lothar¹,Pensl Gerhard²,Ciobanu Florin²,Tadich A.³,Riley J.D.³,Leckey R.C.G.³

Affiliation:

1. Friedrich-Alexander Universität Erlangen-Nürnberg

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

3. La Trobe University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1369.pdf

Reference17 articles.

1. V. V. Afanas'ev, et al., Phys. Stat. Sol. (a) Vol. 162 (1997), pp.321-337.

2. H. Yano, et al., IEEE Electron Device Lett. Vol. 20 (1999), p.611.

3. H. Yano, et al., Mater. Sci. Forum Vol. 338-342 (2000), pp.1005-1008.

4. R. Schörner, et al., IEEE Electron Device Lett. Vol. 20 (1999), p.

5. H. Yano, et al., Mater. Sci. Forum Vol. 338-342 (2000), pp.1109-1112.

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1. Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum;Materials Science Forum;2007-09

2. Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects;Applied Physics A;2006-09-20

3. Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation;Materials Science Forum;2005-05

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