Affiliation:
1. INSA de Lyon - Domaine Scientifique de la Doua
2. Laboratoire des Physique des Semiconducteurs et des Composants Electrique
3. Domaine de Corbeville
4. Université de Lyon
Abstract
Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science