Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
Author:
Affiliation:
1. Université Paul Cézanne
2. Université III d'Aix-Marseille
3. Aix Marseille Université
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.355.pdf
Reference10 articles.
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3. X.J. Ning, P. Pirouz: J. Mat. Res. Vol. 11(4) (1996), p.884.
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5. A.V. Samant, W.L. Zhou, P. Pirouz: Phys. Stat. Sol. (a) Vol. 166 (1998), p.155.
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