Modeling the effect of mechanical stress on bipolar degradation in 4H-SiC power devices
Author:
Affiliation:
1. Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
2. Research and Development Center, Toshiba Corporation, Kawasaki, Kanagawa 212-8582, Japan
Funder
New Energy and Industrial Technology Development Organization
University of Tokyo
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0010648
Reference58 articles.
1. Review of Silicon Carbide Power Devices and Their Applications
2. Material science and device physics in SiC technology for high-voltage power devices
3. Fundamentals of Silicon Carbide Technology
4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
5. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
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