Affiliation:
1. Kyoto Institute of Technology
2. Dong-Eui University
Abstract
The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport method by using halides (HCl). The Si column was produced by VLS mechanism. The column was covered with SiC by conventional CVD process using HMDS ( Hexamethyldisilane ). Carbon Nano Tube ( CNT ) was deposited on Si column covered with SiC by DC assisted µ-wave plasma CVD.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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