Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport system-Reference-Cited by-同舟云学术

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Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport system

Published:1978-12 Issue: Volume:45 Page:118-125
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Braun P.D.,Kosak W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. E.C. Schaarschmidt, DT-AS 1.639.545 (Aug. 21, 1961).

2. Metallurgy of Semiconductor Materials;Glang,1962

3. J. Nickl and E. Sirtl, DT-AS 1.297.080 (Febr. 21, 1964).

4. H.C. Theuerer, DT-AS 1.152.197 (Oct. 5, 1961).

5. W.C. Dash and E.A. Taft, DT-AS 1.285.465 (May 6, 1964).

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microfabrication of Si Column Covered with SiC Film for Electron Emitter;Materials Science Forum;2005-05

2. Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport;Journal of The Electrochemical Society;2000

3. References;Thin Films by Chemical Vapour Deposition;1990

4. Selective epitaxial growth of silicon in a barrel reactor;Chemical Engineering Science;1989

5. Selective Growth of Polysilicon;Journal of The Electrochemical Society;1986-02-01

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