Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
Author:
Affiliation:
1. Laboratoire d'Etudes des Propriétés Electroniques des Solides
2. Universidad de Cádiz
3. TU Ilmenau
4. LETI-CEA Grenoble (Technologies Avancées)
5. Université de Lyon
6. Université Claude Bernard Lyon 1
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.277.pdf
Reference13 articles.
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2. G. Ferro et al: J. Appl. Phys. Vol. 80(8) (1996), p.4691.
3. I. Kamata et al: Mater. Sci. Eng. B Vol. 61-62 (1999), p.531.
4. R. Scholz et al: Appl. Phys. A Vol. 66 (1998), p.59.
5. V. Cimalla et al: Mater. Sci. Eng. B Vol. 61-62(1999), p.553.
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25
2. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process;Materials Science Forum;2005-05
3. Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process;physica status solidi (a);2005-03
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