Affiliation:
1. Rensselaer Polytechnic Institute
Abstract
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Y. Tang, N. Ramungul and T. P. Chow: Mater. Sci. Forum Vol. 338-342 (2000), p.1415.
2. R. Singh, S. Ryu, D. C. Capell and J. W. Palmour: IEEE Trans. on Electron Devices, Vol. 50 (2003), p.774.
3. T. Tanaka, Y. Yasuda and M. Ohayashi: IEEE Trans. on Electron Devices, Vol. ED-33 (1986), p. (2041).
4. T. P. Chow: Electrochemical Society Proceedings, Vol. 98-12 (1998), p.16. Fig. 7. Turn-off transient of 10kV 4H-SiC p-IGBT and MGT.
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2 articles.
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