Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures-Reference-Cited by-同舟云学术

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Published:2005-05 Issue: Volume:483-485 Page:993-996
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Strel'chuk Anatoly M.¹,Kalinina Evgenia V.²,Konstantinov Andrey O.³,Hallén Anders⁴

Affiliation:

1. A.F. Ioffe Physicotechnical Institute RAS

2. Ioffe Physicotechnical Institute RAS

3. AMDS AB

4. KTH Royal Institute of Technology

Abstract

The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x106 rad) and 1 MeV neutrons in the doses range from 1.2x1014 cm-2 to 6.24x1014 cm-2. Neutron irradiation with a dose 1.2x1014 cm-2 increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hnmax » 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x1014 cm-2) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.993.pdf

Reference4 articles.

1. A.M. Strel'chuk, N.S. Savkina: Mat. Sci. and Eng. Vol. B80 (2001), p.378.

2. C. -T. Sah, R.N. Noyce, W. Shockley: Proc. of the I.R.E. Vol. 45 (1957), p.1228.

3. E.V. Kalinina et al: Semiconductors Vol. 37 (2003), p.1229.

4. A.M. Strel'chuk et al: Mat. Sci. and Eng. Vol. B61-62 (1999), p.441.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions;Materials;2021-04-14

2. Silicon carbide for future intense luminosity nuclear physics investigations;NUOVO CIM C-COLLOQ C;2019

3. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n⁺p 4H-SiC Structures;Materials Science Forum;2018-06

4. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure;Materials Science Forum;2013-01

5. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum;Semiconductors;2010-06