Influence of proton irradiation on recombination current in 6H–SiC pn structures-Reference-Cited by-同舟云学术

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Influence of proton irradiation on recombination current in 6H–SiC pn structures

Published:1999-07 Issue: Volume:61-62 Page:441-445
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Strel'chuk A.M,Kozlovski V.V,Savkina N.S,Rastegaeva M.G,Andreev A.N

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions;Materials;2021-04-14

2. Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-11

3. Silicon carbide for future intense luminosity nuclear physics investigations;NUOVO CIM C-COLLOQ C;2019

4. Role of the Carbon Sublattice in n-SiС Conductivity Compensation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-01

5. Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers;Semiconductors;2018-03

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