Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles

Author:

Kozlovski V. V.,Vasil’ev A. E.,Emtsev V. V.,Oganesyan G. A.,Lebedev A. A.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-12

2. Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-04

3. Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-06

4. Performance Evaluation of Sub 5 nm GAA NWMBCFET using Silicon Carbide Source/Drain Material;IETE Journal of Research;2021-03-24

5. Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-03

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