Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC-Reference-Cited by-同舟云学术

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Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC

Published:2004-06 Issue: Volume:457-460 Page:549-554
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Henry Anne¹,Janson Martin S.²,Janzén Erik¹

Affiliation:

1. Linköping University

2. KTH, Royal Institute of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.549.pdf

Reference14 articles.

1. S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 83, 7909 (1998).

2. A. Henry, U. Forsberg, M.S. Jansson and E. Janzen, J. Appl. Phys 94 (2003) 2901.

3. L. Storasta, B. Magnusson, M.K. Linnarsson, J.P. Bergman, E. Janzén, Proc. of the ECSCRM2002, Linköping, Sweden, Sep1-5, 2002, Mater. Sci. Forum 433-436 (2003) 423.

4. M.S. Janson, M.K. Linnarsson, B. Magnusson, A. Henry, unpublished.

5. Y. Koshka, Appl. Phys. Lett. 82 (2003) 3280.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects in SiC;Defects in Microelectronic Materials and Devices;2008-11-19

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