The 3838 Å photoluminescence line in 4H-SiC-Reference-Cited by-同舟云学术

The 3838 Å photoluminescence line in 4H-SiC

Published:2003-09 Issue:5 Volume:94 Page:2901-2906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Henry A.,Forsberg U.,Janson M. S.,Janzén E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1594813

Reference14 articles.

1. Photoluminescence and transport studies of boron in 4H SiC

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3. U. Forsberg, A. Henry, M. K. Linnarsson, and E. Janzén, Proceedings of the ICSCRM ’99, Research Triangle Park, NC, 1999 [Mater. Sci. Forum MSFOEP338–342, 619 (2000)].MSFOEP0255-5476

4. A. Henry, I. G. Ivanov, A. Ellison, and E. Janzén, Proceedings of the 2nd European Conference on Silicon Carbide and Related Materials, Montpellier, France, 1998 [Mater. Sci. Eng., B MSBTEK61–62, 234 (1999)].MSBTEK0921-5107

5. Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

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