Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation-Reference-Cited by-同舟云学术

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Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

Published:2000-05 Issue: Volume:338-342 Page:733-736
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Rutsch G.¹,Devaty Robert P.¹,Choyke Wolfgang J.¹,Langer D.W.¹,Rowland L.B.²,Niemann E.³,Wischmeyer Frank⁴

Affiliation:

1. University of Pittsburgh

2. Aymont Technology, Inc.

3. DaimlerChrysler AG

4. AIXTRON AG

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.733.pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Validation of Raman spectroscopy as a tool for mapping transport parameters in inhomogeneous N‐doped 4H‐SiC;Journal of Raman Spectroscopy;2023-05-11

2. Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature;Applied Physics Express;2021-06-01

3. Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs;Materials Science Forum;2014-02

4. On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs;ECS Transactions;2013-08-31

5. Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC;Journal of Applied Physics;2009-09

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