Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3212532
Reference23 articles.
1. Thermal behavior Spice study of 6H-SiC NMOS transistors
2. Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage
3. Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz
4. Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering
5. Chemical vapor deposition and characterization of undoped and nitrogen‐doped single crystalline 6H‐SiC
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs;Solid-State Electronics;2021-05
2. Semi-classical electronic transport properties of ternary compound AlGaAs2: role of different scattering mechanisms;Journal of Physics: Condensed Matter;2019-12-31
3. Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures;IEEE Transactions on Electron Devices;2019-04
4. Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering;Scientific Reports;2018-07-13
5. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity;Journal of Applied Physics;2018-04-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3