Reduction of Macrodefects in Bulk SiC Single Crystals-Reference-Cited by-同舟云学术

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Reduction of Macrodefects in Bulk SiC Single Crystals

Published:2002-04 Issue: Volume:389-393 Page:59-62
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Balkas Cengiz M.¹,Maltsev Andrei A.²,Roth Matthew D.¹,Heydemann V.D.³,Sharma Mrityunjay⁴,Yushin Nikolay K.¹

Affiliation:

1. Sterling Semiconductor, Inc

2. Caracal, Inc.

3. Pennsylvania State University

4. University of Delhi

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.59.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bulk Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

2. Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design;Journal of Crystal Growth;2006-12

3. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study;Thin Solid Films;2005-04

4. Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy;Materials Science Forum;2004-06

5. Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal;Journal of Crystal Growth;2003-10

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