Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design-Reference-Cited by-同舟云学术

Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design

Published:2006-12 Issue:1 Volume:297 Page:20-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Geiser Jürgen,Klein Olaf,Philip Peter

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

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2. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

3. Investigation of growth processes of ingots of silicon carbide single crystals

4. Sublimation growth of SiC;Konstantinov,1995

5. State of the art in the modelling of SiC sublimation growth

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