SiC Devices with ONO Stacked Dielectrics
Author:
Affiliation:
1. Cree, Incorporation
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1093.pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly reliable SiO2/SiN/SiO2(ONO) gate dielectric on 4H-SiC;Electronics and Communications in Japan (Part II: Electronics);2007
2. Silicon carbide and diamond for high temperature device applications;Journal of Materials Science: Materials in Electronics;2006-01
3. Status and Prospects of SiC Power Devices;IEEJ Transactions on Industry Applications;2006
4. High-Temperature Electronic Materials: Silicon Carbide and Diamond;Springer Handbook of Electronic and Photonic Materials;2006
5. A numerical comparison between MOS control and junction control high voltage devices in SiC technology;Solid-State Electronics;2003-04
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