Highly reliable SiO2/SiN/SiO2(ONO) gate dielectric on 4H-SiC
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy
Reference15 articles.
1. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
2. Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
3. Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
4. Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
5. High-Reliability ONO Gate Dielectric for Power MOSFETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy;Japanese Journal of Applied Physics;2010-08-20
2. Negative Field Reliability of ONO Gate Dielectric on 4H-SiC;Materials Science Forum;2008-09
3. Replicator Dynamics with Dynamic Payoff Reallocation Based on the Government's Payoff;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2008-09-01
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