QuaSiC Smart-Cut Substrates for SiC High Power Devices
Author:
Affiliation:
1. SOITEC SA
2. LETI-CEA Grenoble (Technologies Avancées)
3. INSA de Lyon - Domaine Scientifique de la Doua
4. UMR-CNRS 5531, ENSERG
5. Institute of Physics, Slovak Academy of Sciences
6. UMR CNRS 5628, INP Grenoble-MINATEC
7. MINATEC
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.389-393.151.pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Progress in Chip-Scale Photonic Sensing;IEEE Transactions on Biomedical Circuits and Systems;2009-08
2. Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence;Materials Science Forum;2007-09
3. Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding;Semiconductors;2007-08
4. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding;Materials Science Forum;2006-10
5. Metal Bonding in SiC Based Substrates;Materials Science Forum;2005-05
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