Metal Bonding in SiC Based Substrates-Reference-Cited by-同舟云学术

Metal Bonding in SiC Based Substrates

Published:2005-05 Issue: Volume:483-485 Page:781-784
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Matko Igor¹,Chenevier Bernard²,Madar Roland²,Roussel H.³,Coindeau Stephane,Letertre Fabrice⁴,Richtarch Claire⁴,Di Cioccio Lea⁵

Affiliation:

1. Institute of Physics, Slovak Academy of Sciences

2. UMR CNRS 5628, INP Grenoble-MINATEC

3. Domaine Universitaire

4. SOITEC SA

5. LETI-CEA Grenoble (Technologies Avancées)

Abstract

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.781.pdf

Reference2 articles.

1. QuaSiC Smart Cut substrates for SiC high power devices, Materials Science Forum Vols. 389-393 (2002) pp.151-154.

2. Thesis L. Baud, Grenoble, August 1995. Fig. 3. TEM images from annealed films: a) plan-view of W-Si bonding layer between SiC-4H mono and SiC-3C polycrystalline, b) perpendicular cross-section of bonding layer, c) enlarged cross-section image of bonding layer.

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