Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures
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Published:2006-10
Issue:
Volume:527-529
Page:791-794
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Satoh Masataka1,
Suzuki Tomoyuki1,
Miyagawa Shohei2
Affiliation:
1. Hosei University
2. Tokyo University of Science
Abstract
The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has
been investigated by means of Rutherford backscattering spectrometry in the annealing
temperature range from 200 to 1000 oC. The samples are multiple-implanted by N+ ions with
energy range from 15 to 120 keV at a total dose of 2.4 x 1015 /cm2. Three annealing stages are
observed by isochronal annealing; first stage from 200 to 400 oC, second stage from 400 to 600 oC
and third stage from 600 to 1000 oC. The 80 percent of the N+ implantation-induced defects are
annealed out at the temperature above 600 oC. The annealing mechanism of the defects in each
stage is discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
1. G.L. Harris (Ed. ): Silicon Carbide, EMS Datareviews Series No. 13, (INSPEC, New York 1995).
2. M. Satoh, K. Okamoto, Y. Yakaike, K. Kuriyama, M. Kanaya, and N. Ohtani: Nucl. Instr. and Meth. B Vol. 148 (1999), p.567.
3. M. Satoh, Y. Nakaike, and T. Nakamura: J. Appl. Phys. Vol. 89 (2001), p.1986. Figure 4: Annealing temperature dependence of the Xmin value for the samples annealed for 5 min.