Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD
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Published:2006-06
Issue:
Volume:517
Page:69-72
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Ng Sha Shiong1, Zainuriah Hassan2, Haslan Abu Hassan1, Kordesch M.E.3
Affiliation:
1. University Sains Malaysia (USM) 2. Universiti Sains Malaysia (USM) 3. Ohio University
Abstract
In this paper, we report on the characterization of a set of MOCVD grown GaN
samples with a variety of structural or crystalline quality. X-ray diffraction (XRD) was used to
observe the change of the crystalline structure with deposition temperature. All results show that
the structure type of the GaN deposited films is sensitive to the growth temperature. Our results
also revealed that a good crystalline structure of GaN films could be grown at temperatures higher
than 600°C. Finally, a general picture on the correlations between the growth temperature and the
GaN deposited films crystalline is reported.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Z. Hassan, M.E. Kordesch, W.M. Jadwisienzak, H.J. Lozykowski, W. Halverson and P.C. Colter, Mat. Res. Soc. Symp. Proc., Vol. 536, (1999), p.245. 2. Z. Hassan and M.E. Kordesch, J. Phys. Sci., Vol. 12, (2001), p.21. 3. Z. Hassan, C.T. Chuah, M.J. Abdullah, K. Ibrahim, M.E. Kordesch, W. Halverson and P.C. Colter, MicroSoM., Vol. 3, (2000), p.16. 4. A. Dissanayake, J. Y. Lin, H. X. Jiang, Z. J. Yu and J. H. Edgar, Appl. Phys. Lett. Vol. 65, (1994), p.2317. 5. M. H. Kim, Y. C. Bang, N. M. Park, C. J. Choi, T. Y. Seong and S. J. Park, Appl. Phys. Lett., Vol. 78, (2001), p.2858.
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