Affiliation:
1. Dalian University of Technology
2. Jilin University
Abstract
In this paper, ZnO films are deposited on Freestanding Thick Diamond (FTDF) by plasma-assisted Metal Organic Chemical Vapour Deposition (MOCVD). Diethyl zinc, O2, and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction, Hall measurements, and electron probe microanalysis. Experimental results demonstrate that ZnO films deposited at 600°C and 73Pa displays fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science