Affiliation:
1. University of South Florida
Abstract
Growth rates from 10 to 38 μm/h of single crystal 3C-SiC on planar Si (001) substrates
have been obtained in a low-pressure horizontal hot-wall CVD reactor. The propane-silanehydrogen
gas chemistry system with HCl added as a growth additive, which allows an increased
amount of silane to be introduced into the reactor during growth, was used. The 3C-SiC film growth
rate versus silane mole fraction was found to be a linear function in the range from 0.43x10-3 to
1.50x10-3. Nomarski optical microscopy, scanning electron microscopy, Fourier transform infrared
spectroscopy, atomic force microscopy and X-ray diffraction were used to characterize the
deposited layers. The X-ray rocking curve taken on the (002) diffraction plane of a 12 μm thick 3CSiC
(001) layer displayed a FWHM of 360 arcsec, which indicates the films are mono-crystalline.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
9 articles.
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