Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

Abstract

A vertical hot-wall type reactor, with a unique structure designed for controlling both gas flow behavior and thermal gradient (T/mm) on the susceptor surface, was developed. The simulation results indicate that depending on the height of the epitaxy room (h), the T/mm can be changed from a negative to a positive value. Preliminary epitaxial growth experiments resulted in a maximum growth rate of 51 μm/h, 4-inch area uniformity of σ/mean=1.7% for growth rate and σ/mean=21.5 % for doping concentration, and Z1/2 trap concentration of 9×1012 cm-3 at a growth rate of 43 μm/h.