Fast Non-Contact Dielectric Characterization for SiC MOS Processing-Reference-Cited by-同舟云学术

Fast Non-Contact Dielectric Characterization for SiC MOS Processing

Published:2006-10 Issue: Volume:527-529 Page:1035-1038
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hoff A.M.¹,Oborina E.¹

Affiliation:

1. NNRC at The University of South Florida

Abstract

Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.527-529.1035.pdf

Reference6 articles.

1. A.M. Hoff and D.K. DeBusk: Proc. Symp. M1, Electrochem. Soc. 196th Mtg. (1999).

2. A.M. Hoff: Mat. Res. Soc. Symp. Proc. Vol. 815 (2004), pp.189-198.

3. W.H. Brattain: Nobel Lecture, December 11, (1956).

4. A.M. Hoff, T.C. Esry, and K. Nauka: Solid State Technology No. 7 (1996), pp.139-152.

5. P. Edelman, A.M. Hoff, L. Jastrzebski, and J. Lagowski: US Patent 5, 773, 989 (1998).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of Corona Charge Deposition Technique in Thin Film Industry;World Journal of Nano Science and Engineering;2022

2. Noncontact interface trap determination of SiO2–4H–SiC structures;Journal of Applied Physics;2010-01

3. Fowler–Nordheim analysis of oxides on 4H-SiC substrates using noncontact metrology;Journal of Applied Physics;2009-10-15