Microstructure of SiC/Cu Interface by Pulsed Electric-Current Bonding

Abstract

Pulsed electric-current sintering (PECS) was applied to the bonding of SiC (pressureless-sintered silicon carbide) to Cu (oxygen-free copper) using a mixture of Cu and Ti powders as an intermediate layer. The influences of the intermediate powders on the bond strength of the joint were investigated by observation of the microstructure. The bonding was carried out at carbon-die temperatures from 973 to 1173 K at a bonding pressure of 10 MPa for 3.6 ks. The application of intermediate layers of 100% Ti, 95% Ti + 5% Cu, and 5% Ti + 95% Cu remarkably improved the bond strength as compared with direct bonding without an intermediate powder. SEM observations of the joint with the intermediate powders revealed that a Cu solid-solution layer, a TiC layer, and a Ti5Si3 layer had covered most of the interface, similar to those observed in the friction-bonded and pulsed-electric current bonded joints of SiC to Cu in which the application of a Ti foil as an intermediate layer remarkably improved the bond strength.