Sol-Gel Derived Nanomagnesium Oxide: Influence of Annealing Temperature on the Dielectric Layer Properties

Abstract

Nano-magnesium oxide, MgO film was successfully prepared at various annealing temperatures (400, 450, 500 and 550°C) by using sol-gel method. The behaviour of the MgO as a dielectric layer was investigated in term of its electrical behaviour, relative permittivity and structural properties. The leakage current density obtained was below 10-9 A/cm2 in which is suitable to be used as dielectric layer. Resistivity and relative permittivity values were found to fluctuate with applied annealing temperatures and it was revealed that these changes were related to the surface morphology of the prepared nano-MgO films. Interesting surface morphology was observed for film annealed at 500°C, in which the film formed an island structure, composed of nano particle MgO in range of 45 to 74 nm.