Interfacial Failureof SiN/GaAs Film/Substrate BilayersInduced by Nanoscratch

Abstract

The failure characteristics of silicon nitride thin film deposited on GaAs substrate were investigated by use of nanoscratch. It was found that the film started to failvia delamination or buckling, which should beattributed to interfacial shear stress. The cracks were then formed and propagated around the edge of the delaminated film before it was chipped away by the moving tip. A normal load of 6.5 mN, corresponding to a depth of 150 nm, was found to be the critical threshold for theinterfacial failure. The fracture energy release rateof the film/substrate interface, or the work of adhesion, was calculated as 2.90 J/m2.