Properties of Iodine Doped Amorphous Carbon Thin Films Grown by Thermal CVD

Abstract

Thin film of undoped and doped amorphous carbon has been achieved using the simple thermal CVD system in an ambient gas of Ar and Ar with I2, respectively. The electrical and optical properties of the iodine doped amorphous carbon (a-C:I) thin films were studied. The incorporation of iodine into the amorphous carbon thin film results in increase of electrical conductivity as doping temperature increase up to 400°C, which indicates that doping effect of iodine. Heterojuction is confirmed by rectifying current-voltage characteristics of a-C:I/n-Si junction. The decreasing of optical band gap from 0.54 to 0.25 eV after iodine doping was determined which contribute to induce graphitization in the films. Raman result indicates that sp2 and sp3 bonded carbon atoms were dominated in the both with and without iodine doped thin films.