Aspect-Independent Siliconglass Etching by Bosch Method-Reference-Cited by-同舟云学术

Aspect-Independent Siliconglass Etching by Bosch Method

Published:2019-09 Issue: Volume:822 Page:640-646
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Alekseev R.A.¹,Alieva Aleksandra I.¹,Kucal Ewelina²

Affiliation:

1. JSC GYROOPTICS

2. National Centre for Nuclear Research

Abstract

The purpose of this work was to study and carry out glass etching of monocrystalline silicon using the Bosch method, acquaintance with the conditions of aspect-independent etching. The Bosch process was conducted using sulfur hexafluorideSF6 and perfluorocyclobutaneC4F8on OxfordInstrumentsPlasmaPro®Estrelas100. It was found that in order to level the problems that arise, it is necessary to vary the temporal relations of etching and passivation stages.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.822.640.pdf

Reference27 articles.

1. Abrokwah K.O. Characterization and modeling of plasma etch pattern dependencies in integrated circuits: dis. – Massachusetts Institute of Technology, (2006).

2. Alexandrov S. E. et al. Low‐Temperature Atmospheric Pressure Plasma‐Enhanced CVD of Nanocomposite Coatings Molybdenum Disulfide (Filler)–Silicon Oxide (Matrix), //Advanced Materials Interfaces. – 2017. – Т. 4. – №. 18. – С. 1700241.

3. Alexandrov S. E., Hitchman M. L. Remote Plasma‐Enhanced CVD of Fluorinated Silicon Nitride Films //Chemical Vapor Deposition. – 1997. – Т. 3. – №. 3. – С. 111-117.

4. Alexandrov S. E., Hitchman M. L., Kovalgin A. Remote plasma‐enhanced CVD of silicon nitride films: effects of diluting nitrogen with argon. Part II: effect of nitrogen plasma parameters on layer characteristics //Advanced Materials for Optics and Electronics. – 1998. – Т. 8. – №. 1. – С. 23-29.

5. Arnold J. C., Sawin H. H. Charging of pattern features during plasma etching //Journal of Applied Physics. – 1991. – Т. 70. – №. 10. – С. 5314-5317.