Abstract
In silicon nanoscale transistors, dopant (impurity) atoms can significantly affect transport characteristics, in particular at low temperatures. Coupling of neighboring dopants in such devices is essential in defining the properties for transport. In this work, we briefly present a comparison of different regimes of inter-dopant coupling, controlled by doping concentration and, to some extent, by selective, local doping. Tunneling-transport spectroscopy can reveal the energy spectrum of isolated dopants and of strongly-coupled dopant atoms. Interactions of multiple-dopants quantum dots (QDs) and satellite individual dopant-traps, as observed in some devices, can provide further information to bridge such inter-dopant coupling regimes for more advanced applications.
Publisher
Trans Tech Publications, Ltd.