Verification of Theoretical Model for Tunneling Currents in Al/SiO2/p-Si MOS Capacitors with Nanometer-Thick Oxides

Abstract

The verification of calculation results of the isotropic and anisotropic-isotropic mass models in Al/SiO2/Si MOS capacitor against the experimental data is presented, using electron transversal velocity as a fitting parameter. In the accumulation condition, the comparison yields the electron velocity of 2.8 x 106m/s for both isotropic and isotropic-anisotropic mass models. The tunneling current values for both models are slighly different with experimental data. In the inversion condition, the values of electron velocity for isotropic and isotropic-anisotropic model are 1.55 x 106m/s and 1 x 105m/s, respectively. The calculation results of isotropic-anisotropic mass model appear to be closer to the experimental data compared to those of isotropic mass model, due to the effect of electron effective mass.