Annealing Time Influence on Optical Characteristic of Beta-FeSi2 Thin Film

Abstract

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.