Synthesis of Al-Doped ZnO Nanorod Arrays on Al-Doped ZnO Seed Layer and their Properties

Abstract

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO3)2·6H2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C6H12N4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO3)3∙9H2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10-4 Scm-1. The peak of UV emission of the sample is at 380 nm.