Effect of RF Power on the Chemical Bonding and Humidity Sensing Properties of a-CNx Thin Films

Abstract

Amorphous carbon nitride (a-CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CNx thin films were prepared using pure methane (CH4) gas diluted with nitrogen (N2) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. The characterization techniques used were Fourier transform infrared spectroscopy (FTIR) and field emission scanning electron microscope (FESEM). Humidity sensing properties of the a-CNx thin films were investigated by recording their electrical response to relative humidity (RH) at room temperature. Chemical bonding analysis clearly showed the presence of nitrile bands in the deposited films. The FESEM images of the films show a porous, granule-like and dendritic morphology. The average resistance of the a-CNx thin film is changed from 23.7 kΩ to 5.8 kΩ in the range of 5 to 95%RH. The films show a good response and repeatability as a humidity sensing materials. This work showed that rf power has a significant effects on the chemical bonding, morphology and electrical properties of the a-CNx films.