The Fabrication of TiN Thin Film and its Inhibition of Secondary Electron Emission Properties

Author:

Song Feng Zhen1,Huang Xiao Ping1,Qi Ming Xi1,Chen Kai1,Liu You Liang1,Wang Xiang1,Yan Tian Yu1,Li Wei Kang1,Wang Jia Mei1,Zhao Qing1

Affiliation:

1. University of Electronic Science and Technology of China

Abstract

To enhance the efficiency of the Multistage depressed collector (MDC) of traveling wave tube amplifiers (TWTs), TiN film was deposited by arc ion plating. The thickness and roughness of the film were respectively measured by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In order to study the effects of the preparation parameters and the process methods of substrates, the orthogonal experimental design method was applied to find out experimental optimum parameters. The analysis of experimental results showed that the film thickness decreased as the bias voltage increased within a certain range. The root mean square (rms) of roughness Rqwas the minimum value for TiN film, when the bias voltage was 150V, the maximum value of the secondary electron emission yield (SEEY) reduced from 1.5 to 1.25 at the optimum parameters.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

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