Affiliation:
1. QST
2. National Institute of Advanced Industrial Science and Technology
3. The University of Electro-Communications (UEC)
Abstract
Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are calculated by the transient currents. Applying the drift-diffusion model to the charges, the diffusion length of electron is estimated. Transient currents induced in the gamma ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after gamma ray irradiation.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献