Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

Author:

Savtchouk Alexander1,Wilson Marshall1,Almeida Carlos1,Marinskiy Dmitriy1,Hillard Robert,Lagowski Jacek1

Affiliation:

1. Semilab SDI LLC

Abstract

The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. A. Savtchouk, M. Wilson, J. Lagowski, A. Czett, and C. Buday, Materials Science Forum, 858 (2016) 509-512.

2. M. Wilson, A. Findlay, A. Savtchouk, J. D'Amico, R. Hillard, F. Horikiri and J. Lagowski, ECS J. Solid State Sci. Technol. 6-11 (2017) S3129-S3140.

3. CnCV 210 SiC; GaN, tool by Semilab SDI in 2014. Information on www.semilab.com.

4. R. Hillard, J. Heddleson, D. Zier, P. Rai-Choudhury and D.K. Schroder in Diagnostic Techniques for Semiconductor Materials and Devices, Electrochem. Soc., Pennington, NJ, 1992, 261-274.

5. A. Savtchouk, M. Wilson, and J. Lagowski, Materials Science Forum, 897 (2017) 139-142.

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