High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack-Reference-Cited by-同舟云学术

High-Mobility SiC MOSFETs Using a Thin-SiO₂/Al₂O₃ Gate Stack

Published:2018-06 Issue: Volume:924 Page:494-497
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Urresti Jesus¹,Arith Faiz¹,Vassilevski Konstantin¹,Tiwari Amit Kumar¹,Olsen Sarah¹,Wright Nick G.¹,O'Neill Anthony G.¹

Affiliation:

1. Newcastle University

Abstract

We report the development of a low-temperature (600 °C) gate oxidation approach to minimize the density of interface traps (DIT) at the SiC/SiO2interface, ultimately leading to a significantly higher channel mobility in SiC MOSFETs of 81 cm2·V-1·s-1, >11x higher than devices fabricated alongside but with a conventional 1150 °C gate oxide. We further report on the comparison made between the DITand channel mobilities of MOS capacitors and n-MOSFETs fabricated using the low-and high-temperature gate oxidation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.494.pdf

Reference8 articles.

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3. X. Shen and S. T. Pantelides, Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures, Appl. Phys. Lett. 98, 053507 (2011).

4. T. Hatayama et al, Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiC, IEEE Trans. on Elec. Dev. 55 (8), 2041 (2008).

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