Affiliation:
1. Korea Institute of Ceramic Engineering and Technology
2. Dong-Eui University
Abstract
The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. R. Madar, Nature. 430, (2004) 974-975.
2. D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, Nature. 430, (2004) 1009-1012.
3. Yakimova, R. Tuominen, M. Bakin, A. S. Fornell, J. O. Vehanen, A. Janzen, Inst. Phys. Conf. Ser. 142, (1996) 101−104.
4. K. Gillessen, W.V Munch, J. Crystal Growth. 29, (1973) 263-268.
5. D. H. Hofmann, M.H. Mueller, Mater. Sci. Eng. B 61–62, (1999) 29-39.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献