Improved Offset Voltage Stability of 4H-SiC CMOS Operational Amplifier by Increasing Gamma Irradiation Resistance
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Published:2019-07
Issue:
Volume:963
Page:845-848
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Masunaga Masahiro1, Sato Shintaroh1, Kuwana Ryoh1, Hara Isao2, Shima Akio1
Affiliation:
1. Center for Technology Innovation 2. Hitachi Ltd. Services and Platforms Business Unit
Abstract
We modified the active layout of an operational amplifier (op-amp) to exhibit high gamma irradiation resistance of over 100-kGy using our 4H-SiC complementary MOS technology, which can be applied for measuring instruments installed in nuclear power plants. The op-amp with the modified active layout features both a thin gate oxide and newly developed gate-electrode structure for suppressing the leakage current. From an experiment we conducted, the leakage current of the p-channel MOSFET with modified active layout remained unchanged from the initial value after irradiation, although that of it with the conventional layout we previously evaluated increased by about two orders of magnitude. The offset voltage of the improved op-amp was maintained below 2.8 mV up to 100-kGy irradiation. The improved op-amp also showed a healthy amplification characteristic without distortion.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. T. Chen, Z. Luo, J. D. Cressler, T. F. Isaacs-Smith, J. R. Williams, G. Chung, and S. D. Clark, The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors. , Solid-State Electronics, vol. 46, no. 12, p.2231–2235, Dec. (2002). 2. M. Yoshikawa, H. Itoh, Y. Morita, I. Nashiyama, S. Misawa, H. Okumura, and S. Yoshida, Effects of gamma‐ray irradiation on cubic silicon carbide metal‐oxide‐semiconductor structure., Journal of Applied Physics, vol. 70, no. 3, p.1309–1312, Aug. (1991). 3. T. Ohshima, M. Yoshikawa, H. Itoh, Y. Aoki, and I. Nashiyama, Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by gamma-ray irradiation., Japanese Journal of Applied Physics, vol. 37, no. 8B, pp. L1002–L1004, Aug. (1998). 4. T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie, Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region., Japanese Journal of Applied Physics, vol. 55. no. 1S, pp. 01AD01–1–01AD01–4, Oct. (2015). 5. K. K. Lee, T. Ohshima, and H. Itoh, Performance of gamma irradiated P-channel 6H-SiC MOSFETs: High total dose., IEEE Transactions on Nuclear Science, vol. 50, no. 1, p.194–200, Feb. (2003).
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