Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region-Reference-Cited by-同舟云学术

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Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Published:2015-10-29 Issue:1S Volume:55 Page:01AD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohshima Takeshi,Yokoseki Takashi,Murata Koichi,Matsuda Takuma,Mitomo Satoshi,Abe Hiroshi,Makino Takahiro,Onoda Shinobu,Hijikata Yasuto,Tanaka Yuki,Kandori Mikio,Okubo Shuichi,Yoshie Toru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. Power semiconductor device figure of merit for high-frequency applications

2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

3. High-voltage accumulation-layer UMOSFET's in 4H-SiC

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1. Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation;IEEE Electron Device Letters;2024-04

2. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02

3. Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors;Quantum Beam Science;2023-10-11

4. Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms;Chinese Physics B;2023-04-01

5. Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors;Journal of Applied Physics;2022-06-28

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