Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Author:

Planson Dominique1,Asllani Besar1,Hamad Hassan1,Locatelli Marie Laure2,Arvinte Roxana2,Raynaud Christophe1,Bevilacqua Pascal1,Phung Luong Viet1

Affiliation:

1. Université de Lyon

2. Université de Toulouse

Abstract

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. H. Hamad, C. Raynaud, P. Bevilacqua, S. Scharnholz, D. Planson, Materials Science Forum Vols. 821-823 (2015), pp.223-228.

2. S. Ono, M. Arai, C. Kimura, Japanese Journal of Applied Physics Vol. 43, n°. 10 (2004), pp.7107-7108.

3. K. Mochizuki, H. Okino, H. Matsushima, Y. Toyota, Materials Science Forum Vols. 821-823 (2015), pp.640-643.

4. Sentaurus Device User Guide Version F-2017, http://www.synopsys.com/home.aspx.

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