Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS-Reference-Cited by-同舟云学术

Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS

Published:2019-05 Issue: Volume:954 Page:139-143
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Gu Hang¹,Tang Yi Dan¹,Ge Lan²,Bai Yun¹,Zhang You Run³,Luo Ya Fei²,Liu Xin Yu¹,Song Guan¹,Tan Ben¹

Affiliation:

1. Chinese Academy of Sciences

2. Siemens Business (Shanghai) Electronic Technology Co., Ltd

3. University of Electronics Science and Technology of China

Abstract

In this paper the electrothermal properties of the 4H-SiC JBS (Junction barrier Schottky) diode is investigated. FloTHERM and Silvaco TCAD are used for electrothermal simulation at the same time. Firstly, the effect of Rjc (junction-to-case thermal resistance) on junction temperature is investigated, the result shows that the junction temperature is more sensitive to the Rjc in the current heating mode because of some kind of positive feedback. Then, a current pulse is applied to the JBS, result shows that this kind of positive feedback is especially noticeable. Finally, the JBS will be compared with PIN under high current density pulsed operation, in order to analyze their thermal sensitivity to Rjc.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.954.139.pdf

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